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- W4313116811 abstract "SiO2 passivation is commonly used to improve the efficiency of silicon-based photovoltaics. However, SiO2 passivation requires high processing temperatures, potentially leading to a deterioration of the Si bulk quality. A novel sulfur-based passivation, requiring lower processing temperatures (~550 degree C), has been introduced, which, however, can suffer from degradation during the subsequent manufacturing process. Hence, a SiNx capping layer is required to protect the passivation layer. In this study, we have investigated sulfur-passivated n-n+ diffused silicon wafers with SiNx capping layers of varying thicknesses, as well as the impact of subsequent rapid thermal processing (RTP) on these layers, using x-ray photoelectron spectroscopy (XPS) and x-ray emission spectroscopy (XES). The surface-sensitive XPS data gives detailed insights into the local chemical bonding environments at the surface. In particular, it shows sulfur in a sulfite-like chemical environment and the presence of Si-O bonds on the sulfur-passivated silicon sample. The more bulk-sensitive XES S L2,3 spectra reveal the presence of S-Si bonds, which is maintained upon SiNx layer deposition. Subsequent RTP causes an increase in oxygen and sulfur content at the surface, accompanied with the formation of sulfates. A detailed description of the various chemical structure findings will be discussed in view of their ability to protect and passivate the Si surface." @default.
- W4313116811 created "2023-01-06" @default.
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- W4313116811 date "2022-06-05" @default.
- W4313116811 modified "2023-10-15" @default.
- W4313116811 title "Chemical surface and interface structure of sulfur-passivated silicon with a SiNx capping layer" @default.
- W4313116811 doi "https://doi.org/10.1109/pvsc48317.2022.9938794" @default.
- W4313116811 hasPublicationYear "2022" @default.
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