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- W4313124908 abstract "The Tantalum oxide material (Ta 2 O 5 ) as tunnel oxide in comparison with the Silicon dioxide (SiO 2 ) Tunnel oxide is proposed. The lower bandgap and high refractive index of Ta 2 O 5 has several advantages over SiO 2 . The Ta 2 O 5 is used as Anti-Reflecting coating earlier, but also has capability to behave as the tunneling oxide. In the ultrathin region, the Tantalum oxide (Ta 2 O 5 ) potentially produces extremely high tunneling and high electric field. The greater electrical intensity increases both the transportation of carrier and passivation quality of designed c-Si structure. The carrier selectivity is also increased due to very high capacitive nature. The performance measurement is done in ASTM certified AM1.5G environment using Silvaco ATLAS 2D TCAD tool. The comparison has been made between Ta 2 O 5 and SiO 2 , to show the advantage of Ta 2 O 5 over SiO 2 . The lower bandgap of 4.8eV and higher affinity of 3.19 of Ta 2 O 5 as compared to SiO 2 proves to be better material as tunneling oxide. The bandgap and electric field region of both the materials have been studied. In first approach to use Ta 2 O 5 as tunneling oxide, the power conversion 28.42% is obtained for 0.1nm thickness of the Ta 2 O 5 . External and internal quantum efficiencies are well above 80% and 90% respectively. The characteristics of the Ta 2 O 5 tunneling based solar cell are compared with the previous reported solar cell." @default.
- W4313124908 created "2023-01-06" @default.
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- W4313124908 date "2021-03-01" @default.
- W4313124908 modified "2023-09-27" @default.
- W4313124908 title "Electrical Analysis and Comparison of Ta<sub>2</sub>O<sub>5</sub> Tunneling Oxide with SiO<sub>2</sub> in Passivated c-Si Solar Cell" @default.
- W4313124908 doi "https://doi.org/10.1142/s0129156421400024" @default.
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