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- W4313132989 abstract "This work resumes some of the most important results that have been obtained in our research group regarding the use of atomic-layer deposition (ALD) as the main thin-film deposition technique for metal oxides with high dielectric constant. ALD has been applied for the development of logic, memory, sensing and quantum technologies in which ultra-thin metal oxides (Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> , HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> and TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> with a physical thickness of less than 10nm), are the active part of the final devices under study." @default.
- W4313132989 created "2023-01-06" @default.
- W4313132989 creator A5067075015 @default.
- W4313132989 date "2022-07-04" @default.
- W4313132989 modified "2023-09-27" @default.
- W4313132989 title "ALD for Advanced Logic, Memory, Sensing and Quantum Technologies" @default.
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- W4313132989 doi "https://doi.org/10.1109/laedc54796.2022.9908229" @default.
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