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• W4313197816 abstract "High-power, high-integration, and high-energy storage density electrical devices and film capacitors require polymer dielectrics with high dielectric characteristics. However, polymer dielectrics accumulate significant charge during operation, causing local electric field distortion, flashover and breakdown. The deep-level defect state (electron/hole accumulation center) fundamentally affects the dielectric strength. Unfortunately, research on passivating deep-level defects in polymer dielectrics is limited. In this study, KX (X = F, Cl, Br, I) effectively passivated deep-level defect states in polymer dielectrics. The cation dipole effect on polymers was found to be the deep-level defect passivation principle. The principle of anion passivation of deep-level defects by suspending anions and cations is the key to producing more stable C covalent bonds. Such bonds transfer the local charge from C with the lone electron pair that originally contains the hanging bond. Therefore, some transfer occurs, and the anion implements effective passivation. We also investigated the passivation mechanism of KX anion-passivated polymer dielectrics. We found that anions can transform bonding-state defects into antibonding-state defects at deep-level defects in the gap. Therefore, the energy of the defect state rises and disappears in the deep band gap. This study addressed the design of high-performance polymer dielectrics, providing a reference for experimental and theoretical analyses." @default.
• W4313197816 created "2023-01-06" @default.
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• W4313197816 date "2023-03-01" @default.
• W4313197816 modified "2023-10-12" @default.
• W4313197816 title "Contaction of atoms for outstanding dielectric characteristics in KX-passivated polymer dielectrics" @default.
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• W4313197816 doi "https://doi.org/10.1016/j.nanoen.2022.108152" @default.
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