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- W4313251710 abstract "Optoelectronic synapses are considered to be important cornerstones in the construction of neuromorphic computing systems because of their low power consumption, high operating speeds, and high scalability. In this work, we demonstrate an optoelectronic synaptic device based on a ZnO/HfO x heterojunction in which optical potentiation/electrical depression behaviors and nonvolatile high current state can be implemented. The heterojunction device exhibits conductance evolution with high linearity. The excellent optoelectronic memristive behavior of the device can be attributed to the interface barrier between ZnO and HfO x , which hinders the recombination of photo-excited electron–hole pairs to increase the carrier lifetime, and realizes the nonvolatile high current state. More importantly, the artificial vision system based on optoelectronic synaptic devices can achieved a high recognition accuracy of 96.1%. Our work provides a feasible pathway toward the development of optoelectronic synaptic devices for use in high-performance neuromorphic vision systems." @default.
- W4313251710 created "2023-01-06" @default.
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- W4313251710 date "2022-12-26" @default.
- W4313251710 modified "2023-10-16" @default.
- W4313251710 title "Optoelectronic synaptic device based on ZnO/HfO<sub>x</sub> heterojunction for high-performance neuromorphic vision system" @default.
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- W4313251710 doi "https://doi.org/10.1063/5.0129642" @default.
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