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- W4313251854 abstract "The ultraviolet (UV) spectrum is considered a harmful light yet useful with the correct amount of exposure for industrial and academic applications. Herein, a dual-mode device, ultraviolet-A (UV-A) emitting and solar-blind UV photo-detecting, was fabricated using a ZnGa2O4 (ZGO) in a metal-oxide-semiconductor (MOS) structure. The ZGO film was deposited on the p+-Si substrate through a facile one-step annealing all-solution precursor process. The strategy to achieve bi-functionality was demonstrated by changing the electric configurations. Under a sinusoidal AC power, it emits broad UV-A light, which is optically referred to as the impact excitation of holes and electrons within the ZGO lattice. However, under UV irradiation, it presents a decent photo-current response with an acceptable UV/visible rejection ratio and a millisecond response with the help of an external electric field from DC bias voltage. Our work could provide a feasible method for developing multifunctional electronic devices based on MOS structure." @default.
- W4313251854 created "2023-01-06" @default.
- W4313251854 creator A5046136203 @default.
- W4313251854 creator A5049657796 @default.
- W4313251854 date "2023-03-01" @default.
- W4313251854 modified "2023-09-25" @default.
- W4313251854 title "A UV-emitting and -sensing device from ZnGa2O4 oxide layer in metal-oxide-semiconductor structure" @default.
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- W4313251854 doi "https://doi.org/10.1016/j.jsamd.2022.100531" @default.
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