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- W4313256432 abstract "High-quality single component freestanding p-type and n-type GaN nanobelts were prepared by an electrochemical (EC) lift-off technique and subsequently transferred onto SiO2/Si substrates for the fabrication of high-performance ultraviolet photodetectors (UV PDs). The fabricated p-type nitrogen-polar (N-polar) GaN nanobelt UV PDs exhibited high photoresponsivity (7416.7 A/W) with a high photocurrent of 311 μA and the n-type devices presented high detectivity (1.44 × 1014 Jones) with a low dark current of 0.351 nA. Under dark condition, the thermionic field emission (TFE) and thermionic emission (TE) were found to be responsible for the current transport mechanisms of the p-type and n-type GaN nanobelt UV PDs, respectively. In addition, the enhancement of photoresponse performances in the N-polar GaN nanobelt PDs is not only attributed to their large surface-to-volume ratio but also to the strong built-in electric field. This work suggests that the rational combination of N-polar and surface effects of the freestanding GaN nanobelts is a viable approach to achieving high-performance GaN-based optoelectronic devices." @default.
- W4313256432 created "2023-01-06" @default.
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- W4313256432 date "2023-03-01" @default.
- W4313256432 modified "2023-09-23" @default.
- W4313256432 title "Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance" @default.
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- W4313256432 doi "https://doi.org/10.1016/j.apsusc.2022.156168" @default.
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