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- W4313304739 abstract "Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here, we present an extensive optimization of Sn growth on InSb, InAsSb and InAs nanowires. We demonstrate how the growth conditions and the crystal structure/symmetry of the semiconductor drive the formation of either semi-metallic $mathrm{alpha-Sn}$ or superconducting $mathrm{beta-Sn}$. For InAs nanowires, we obtain phase-pure, superconducting $mathrm{beta-Sn}$ shells. However, for InSb and InAsSb nanowires, an initial epitaxial $mathrm{alpha-Sn}$ phase evolves into a polycrystalline shell of coexisting $mathrm{alpha}$ and $mathrm{beta}$ phases, where the $beta/alpha$ volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the $mathrm{beta-Sn}$ content. Therefore, this work provides key insights into Sn phase control on a variety of semiconductors, with consequences for the yield of superconducting hybrids suitable for generating topological systems." @default.
- W4313304739 created "2023-01-06" @default.
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- W4313304739 date "2022-12-26" @default.
- W4313304739 modified "2023-10-18" @default.
- W4313304739 title "Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires" @default.
- W4313304739 doi "https://doi.org/10.48550/arxiv.2212.13314" @default.
- W4313304739 hasPublicationYear "2022" @default.
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