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• W4313306428 abstract "In this letter, we proposed a dynamic compact model for metal-ferroelectric-semiconductor (MFS) ferroelectric tunnel junctions (FTJ) based on their device physics. The voltage control over dynamic polarizations and the semiconductor surface potentials is achieved for full-region operations, supporting complex FTJ state transitions. A unified and smooth current model across different regions was proposed by formulating tunneling transports in FTJ with complicated barrier shapes from the first-principle tunneling theory. The model was extensively verified with both experimental data and technology computer-aided design (TCAD) simulations, featuring accurate descriptions of multi-states, frequency dependent programming, and circuit simulations." @default.
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• W4313306428 date "2023-02-01" @default.
• W4313306428 modified "2023-09-24" @default.
• W4313306428 title "A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions" @default.
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• W4313306428 doi "https://doi.org/10.1109/led.2022.3233456" @default.
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