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• W4313334003 endingPage "111192" @default.
• W4313334003 startingPage "111192" @default.
• W4313334003 abstract "The symmetric and anti-symmetric form factors of GaP, InP, InSb, GaSb, InAs, and GaAs are calculated using the pseudo-potential approach (EPM) associated with the improved virtual crystal approximation (VCA), and the electronic band structure of the zinc blende GaxIn1-xPySbzAs1-y-z alloys with a lattice matched to GaSb is determined. The lattice dynamics, and mechanical, and optical properties of these alloys are calculated. The thermal response to the considered properties of the GaxIn1-xPySbzAs1-y-z alloys is studied. We discover that the direct gap in the GaxIn1-xPySbzAs1-y-z alloys reduces when Gallium is added. A direct-to-indirect transition occurs at a concentration of Antimonide of 1 at (x = 0.7 for T = 0 K, 100 K), (x = 0.8 for T = 200 K, 300 K), and (x = 0.9 for T = 400 K, 500 K), respectively. The GaxIn1-xPySbzAs1-y-z/GaSb can be utilized in optoelectronic devices in high-temperature ranges." @default.
• W4313334003 created "2023-01-06" @default.
• W4313334003 creator A5006922433 @default.
• W4313334003 creator A5091194659 @default.
• W4313334003 date "2023-04-01" @default.
• W4313334003 modified "2023-10-15" @default.
• W4313334003 title "Behavior of lattice dynamics, electronic, optical, and mechanical properties of pentanary GaxIn1-xPySbzAs1-y-z alloy lattice matched to GaSb substrate under temperature" @default.
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• W4313334003 doi "https://doi.org/10.1016/j.jpcs.2022.111192" @default.
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