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- W4313366894 endingPage "768" @default.
- W4313366894 startingPage "751" @default.
- W4313366894 abstract "Solubility of Sn in Ge network gives it a preference for photonic applications, because of the direct transition in GeSn alloy. Here, we employed the metal-induced crystallization (MIC) process of amorphous Ge and Si via Sn as a novel mechanism to incorporate Sn inside Ge and Si networks. (Al/Si/Sn/Ge/Sn) and (Al/Ge/Sn/Ge/Sn) multilayers are deposited by thermal vacuum evaporation on different substrates. The devices are annealed under low vacuum at 500 °C to incorporate the oxygen for band-gap tuning. The structure of Ge-doped nanocrystals is investigated. The direct transition and band-gap values have been estimated using diffuse reflectance spectroscopy and photoluminescence (PL) measurements. PL indicated that the junctions have emissions from visible to NIR regions that make them promising as optically pumped white-light sources as well as waveguide applications, and the impact of the base substrate on enhancing the emission has been investigated via PL measurements. Electroluminescence measurements show that the prepared heterostructures on fluorine-doped tin oxide (FTO) substrate have sharp random lasing spikes over the range of PL samples spectra as the sample can lase randomly by light scattering through the Ge-doped nanocrystalline materials. The charge carrier lifetime measurements show high lifetime for the prepared sample. These give them the chance to be a candidate for white-light random laser diode applications." @default.
- W4313366894 created "2023-01-06" @default.
- W4313366894 creator A5008131966 @default.
- W4313366894 creator A5042921999 @default.
- W4313366894 creator A5045550861 @default.
- W4313366894 creator A5045691955 @default.
- W4313366894 creator A5046704226 @default.
- W4313366894 creator A5081918623 @default.
- W4313366894 date "2022-12-30" @default.
- W4313366894 modified "2023-10-07" @default.
- W4313366894 title "Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)" @default.
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