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- W4313387415 abstract "In this work, we report on a GaN/AlGaN superlattice based normally-off hole channel FinFET devices. A combination of Schottky gate and 60 nm wide fins led to enhancement mode operation. The device had an on-current of 13 mA/mm and an on-resistance of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$300~Omega $ </tex-math></inline-formula> .mm. simultaneously, a large Ion/Ioff > 107 and a current modulation of more than two orders of magnitude in the enhancement mode regime was also achieved." @default.
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- W4313387415 date "2023-01-01" @default.
- W4313387415 modified "2023-10-06" @default.
- W4313387415 title "GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate" @default.
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- W4313387415 doi "https://doi.org/10.1109/led.2022.3223331" @default.
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