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- W4313395554 abstract "This work presents a transformer matching X band MMIC power amplifier (PA) on gallium nitride (GaN) process. A port impedance modeling-based transformer design method is proposed and analyzed. The method simplifies the transformer matching network design process, improves matching impedance accuracy, and relieves designer’s burden. A novel compact temperature compensation (TC) circuit is also used in this design. The PA design on the 0.25µm MMIC GaN technology process, and occupies 1.594mm2 area. At a 28V supply, the gain and output power of PA reaches 15dB and 29dBm respectively. Additionally, the designed TC circuit stabilizes PA current consumption from temperature variation. From -55 to 85°C, the PA current consumption stability improves by more than 60% by using the proposed TC bias circuit." @default.
- W4313395554 created "2023-01-06" @default.
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- W4313395554 date "2022-12-25" @default.
- W4313395554 modified "2023-10-14" @default.
- W4313395554 title "A transformer matching X-band MMIC power amplifier with temperature compensation technique on 0.25µm GaN process" @default.
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- W4313395554 doi "https://doi.org/10.1587/elex.19.20220425" @default.
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