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• W4313415059 endingPage "79" @default.
• W4313415059 startingPage "79" @default.
• W4313415059 abstract "In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer. The results show that with the increase of trap concentration, the traps capture electrons and reduce the off-state leakage current, which can improve breakdown voltage of the devices. At the same time, as the trap concentration increases, the ionized traps make a high additional electric field near the drain edge, leading to the decrease of breakdown voltage. With the combined two effects above, the breakdown voltage almost ultimately saturates. When the source-to-gate (Access-S) region in the GaN buffer layer is doped alone, the minimum and most linear leakage current for the same trap concentrations are obtained, and the additional electric field has a relatively small effect on the electric field peak near the drain as the ionized traps are furthest from drain. All these factors make the breakdown voltage increase more controllably with the Access-S region doping, and it is a more potential way to improve the breakdown performance." @default.
• W4313415059 created "2023-01-06" @default.
• W4313415059 creator A5002329405 @default.
• W4313415059 creator A5023244063 @default.
• W4313415059 creator A5024961971 @default.
• W4313415059 creator A5027817702 @default.
• W4313415059 creator A5033229951 @default.
• W4313415059 creator A5045185896 @default.
• W4313415059 creator A5052217747 @default.
• W4313415059 creator A5064772312 @default.
• W4313415059 creator A5066318907 @default.
• W4313415059 creator A5068864591 @default.
• W4313415059 creator A5069084441 @default.
• W4313415059 creator A5074264859 @default.
• W4313415059 date "2022-12-28" @default.
• W4313415059 modified "2023-10-02" @default.
• W4313415059 title "Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs" @default.
• W4313415059 cites W1976295025 @default.
• W4313415059 cites W1983819415 @default.
• W4313415059 cites W1994824516 @default.
• W4313415059 cites W2001098267 @default.
• W4313415059 cites W2008443871 @default.
• W4313415059 cites W2039219095 @default.
• W4313415059 cites W2052021357 @default.
• W4313415059 cites W2058226594 @default.
• W4313415059 cites W2078420192 @default.
• W4313415059 cites W2099408414 @default.
• W4313415059 cites W2106184779 @default.
• W4313415059 cites W2111051464 @default.
• W4313415059 cites W2124722583 @default.
• W4313415059 cites W2137398856 @default.
• W4313415059 cites W2140646852 @default.
• W4313415059 cites W2161910747 @default.
• W4313415059 cites W2163194368 @default.
• W4313415059 cites W2167798274 @default.
• W4313415059 cites W2291580079 @default.
• W4313415059 cites W2335100009 @default.
• W4313415059 cites W2507414086 @default.
• W4313415059 cites W2553705919 @default.
• W4313415059 cites W2579356238 @default.
• W4313415059 cites W2776202374 @default.
• W4313415059 cites W2901784451 @default.
• W4313415059 cites W2970921218 @default.
• W4313415059 cites W2999555326 @default.
• W4313415059 cites W3009468953 @default.
• W4313415059 cites W3014806226 @default.
• W4313415059 cites W3023035873 @default.
• W4313415059 cites W3040507912 @default.
• W4313415059 cites W3109375538 @default.
• W4313415059 cites W4200299888 @default.
• W4313415059 cites W4205475236 @default.
• W4313415059 cites W4211169636 @default.
• W4313415059 cites W4213130530 @default.
• W4313415059 doi "https://doi.org/10.3390/mi14010079" @default.
• W4313415059 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/36677140" @default.
• W4313415059 hasPublicationYear "2022" @default.
• W4313415059 type Work @default.
• W4313415059 citedByCount "3" @default.
• W4313415059 countsByYear W43134150592023 @default.
• W4313415059 crossrefType "journal-article" @default.
• W4313415059 hasAuthorship W4313415059A5002329405 @default.
• W4313415059 hasAuthorship W4313415059A5023244063 @default.
• W4313415059 hasAuthorship W4313415059A5024961971 @default.
• W4313415059 hasAuthorship W4313415059A5027817702 @default.
• W4313415059 hasAuthorship W4313415059A5033229951 @default.
• W4313415059 hasAuthorship W4313415059A5045185896 @default.
• W4313415059 hasAuthorship W4313415059A5052217747 @default.
• W4313415059 hasAuthorship W4313415059A5064772312 @default.
• W4313415059 hasAuthorship W4313415059A5066318907 @default.
• W4313415059 hasAuthorship W4313415059A5068864591 @default.
• W4313415059 hasAuthorship W4313415059A5069084441 @default.
• W4313415059 hasAuthorship W4313415059A5074264859 @default.
• W4313415059 hasBestOaLocation W43134150591 @default.
• W4313415059 hasConcept C119321828 @default.
• W4313415059 hasConcept C119599485 @default.
• W4313415059 hasConcept C121332964 @default.
• W4313415059 hasConcept C127413603 @default.
• W4313415059 hasConcept C139719470 @default.
• W4313415059 hasConcept C145018004 @default.
• W4313415059 hasConcept C145148216 @default.
• W4313415059 hasConcept C162324750 @default.
• W4313415059 hasConcept C165801399 @default.
• W4313415059 hasConcept C171250308 @default.
• W4313415059 hasConcept C172385210 @default.
• W4313415059 hasConcept C178790620 @default.
• W4313415059 hasConcept C185592680 @default.
• W4313415059 hasConcept C189278905 @default.
• W4313415059 hasConcept C192562407 @default.
• W4313415059 hasConcept C198291218 @default.
• W4313415059 hasConcept C26873012 @default.
• W4313415059 hasConcept C2777042071 @default.
• W4313415059 hasConcept C2778871202 @default.
• W4313415059 hasConcept C2779227376 @default.
• W4313415059 hasConcept C2779892579 @default.
• W4313415059 hasConcept C32921249 @default.
• W4313415059 hasConcept C49040817 @default.
• W4313415059 hasConcept C57863236 @default.
• W4313415059 hasConcept C60799052 @default.

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