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- W4313484987 abstract "We optimized gallium nitride drift layers for high voltage and low resistance vertical electronic devices by tuning the doping concentration for a given thickness of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$5~mu text{m}$ </tex-math></inline-formula> . The optimization procedure is based on an empirical mobility model in order to maximize the corresponding device’s power figure-of-merit with respect to the drift layers parameters. We demonstrate quasi-vertical gallium-nitride based avalanche and punch-through pn-diodes grown on sapphire substrates and we compare the results to the theoretical breakdown voltage values as a function of the drift region doping concentration and thickness. We report on a pn-diode with 545 V avalanche breakdown voltage and a specific resistance of 0.34 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{m}Omega $ </tex-math></inline-formula> cm2 resulting in a power figure-of-merit of 874 MW / cm2 and a punch-through pn-diode with 920 V breakdown voltage, specific resistance of 0.57 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{m}Omega $ </tex-math></inline-formula> cm2 resulting in a power figure-of-merit of 1.48 GW / cm2." @default.
- W4313484987 created "2023-01-06" @default.
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- W4313484987 date "2023-03-01" @default.
- W4313484987 modified "2023-10-06" @default.
- W4313484987 title "Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes" @default.
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- W4313484987 doi "https://doi.org/10.1109/led.2023.3234101" @default.
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