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• W4313487560 abstract "In this work are investigated the DC and low frequency noise room-temperature operation of p-channel gate-all-around (GAA) vertically stacked silicon nanosheets (NS). The key DC parameters are estimated using methodologies which are not affected by the impact of the access resistance. Low frequency noise studies shown that the carrier number fluctuations correlated to the mobility fluctuations mechanism explain the 1/f behavior from weak to moderate inversion. It is also discussed how access resistance can have an affect on the Coulomb scattering coefficient estimation. In strong inversion, the access resistance noise contribution is seen to dominates the total 1/f noise." @default.
• W4313487560 created "2023-01-06" @default.
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• W4313487560 date "2023-03-01" @default.
• W4313487560 modified "2023-10-13" @default.
• W4313487560 title "In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets" @default.
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• W4313487560 doi "https://doi.org/10.1016/j.sse.2023.108591" @default.
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