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- W4313593295 abstract "In this paper, a high-performance and highly-stable soft error resistant 12T (HPHS12T) SRAM cell is proposed. Based on polarity reversal design and NMOS stacked structure, the proposed HPHS12T cell can recover from any single event upsets (SEU) induced at all its sensitive nodes and even single event multiple-node-upsets (SEMNU) induced at its internal storage node pair Q-QN, while also having the maximum read static noise margin (RSNM) and write noise margin (WNM), as well as excellent write-ability. Though the HPHS12T cell exhibits a larger static hold power, it has the best overall performance of all the other cells. This is proven by having the highest electrical quality metric (EQM) value, thus making the proposed cell a better choice for space applications." @default.
- W4313593295 created "2023-01-06" @default.
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- W4313593295 date "2023-02-01" @default.
- W4313593295 modified "2023-09-26" @default.
- W4313593295 title "High-performance and highly-stable soft error resistant 12T SRAM cell for space applications" @default.
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- W4313593295 doi "https://doi.org/10.1016/j.microrel.2022.114885" @default.
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