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• W4313611906 endingPage "015001" @default.
• W4313611906 startingPage "015001" @default.
• W4313611906 abstract "In this paper, a p-NiO/n-Ga 2 O 3 heterojunction diode with positive bevel angle termination based on a complete wafer is proposed, verified and optimized by TCAD. The results indicated the optimal angle of 78° for the positive bevel angle terminal, which reduces the peak surface electric field to 6 MV cm −1 and effectively avoids the premature breakdown of the terminal of the Ga 2 O 3 layer. Further, the effect of each dielectric passivation on the terminal electric field was investigated, where SiO 2 was determined to be the optimal passivation material to minimize the peak electric field on the side of the terminal. Ultimately, considering the effect of drift layer thickness on breakdown voltage (BV) and specific on-resistance (R on·sp ), the diode achieves BV up to 10 kV and optimal power figure of merit (PFOM) over 16.5 GW cm −2 when the drift layer thickness is 20 μ m, which fully demonstrates the great potential of positively beveled terminal-optimized p-NiO/n-Ga 2 O 3 heterojunction diodes for next-generation high-voltage and high-power applications." @default.
• W4313611906 created "2023-01-07" @default.
• W4313611906 creator A5018181452 @default.
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• W4313611906 date "2023-01-01" @default.
• W4313611906 modified "2023-10-18" @default.
• W4313611906 title "Design of a 10 kV and 16.5 GW cm⁻² NiO/β-Ga₂O₃ Heterojunction Diode on a Complete Wafer with a Positive Beveled-Mesa" @default.
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• W4313611906 doi "https://doi.org/10.1149/2162-8777/acb100" @default.
• W4313611906 hasPublicationYear "2023" @default.
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