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- W4315780907 abstract "In this paper, we physically modeled passivated ultrathin Cu (In1−xGax) Se2 solar cells with different bandgap grading configurations. Firstly, we have designed the cell architecture according to the fabricated model. The novelty in this work is the modeling of passivated u-CIGS solar cells with different bandgap grading profile configurations in order to achieve high efficiency with a thickness of 500 nm. A significant influence on device performance has been observed while changing absorber doping density, electron affinity, and operating temperature (range of 10–70 °C) for the investigated samples. ZnS has been used as a buffer layer to replace the conventional CdS material in order to improve cell efficiency. The impact of the buffer doping density and electron affinity on u-CIGS cell performance is explored. The simulation results show that a high bandgap at the front and rear sides with an acceptor density of 2 × 1016 provide the best electrical cell parameters: Jsc of 31.53 mA/cm2, Voc of 742.78 mV, FF of 77.50%, η of 18.15%. Our findings can be considered guidelines for new single and/or tandem cell optimization to achieve high efficiency." @default.
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- W4315780907 date "2023-01-12" @default.
- W4315780907 modified "2023-10-15" @default.
- W4315780907 title "Graded Bandgap Ultrathin CIGS Solar Cells (Invited Paper)" @default.
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- W4315780907 doi "https://doi.org/10.3390/electronics12020393" @default.
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