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• W4316171364 abstract "The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP2 Se6 atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm2 V-1 s-1 , and an ultrahigh on/off current exceeding 106 at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP2 Se6 . Additionally, a multilayer graphene/CuBiP2 Se6 /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 104 A W-1 , an external quantum efficiency (EQE) of 1.5 × 107 %, a detectivity (D) of 1.14 × 1013 Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP2 Se6 an ideal p-type candidate material for next-generation CMOSs logic devices." @default.
• W4316171364 created "2023-01-15" @default.
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• W4316171364 date "2023-02-21" @default.
• W4316171364 modified "2023-10-15" @default.
• W4316171364 title "Record‐High Work‐Function p‐Type CuBiP₂Se₆ Atomic Layers for High‐Photoresponse van der Waals Vertical Heterostructure Phototransistor" @default.
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• W4316171364 doi "https://doi.org/10.1002/adma.202209995" @default.
• W4316171364 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/36640444" @default.
• W4316171364 hasPublicationYear "2023" @default.
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