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• W4316660932 abstract "This paper proposes a radio frequency (RF) rectifier topology for low-power wireless power transmission (WPT) applications in the X band. The rectifier consists of a biased PMOS pair and is matched to the RF signal source impedance using a PCB transmission line (TL) matching network. It is demonstrated that a clever optimization of the bias voltage enables the rectifier to achieve greater sensitivity and efficiency than previous works at X band. The rectifier was designed in a 45 nm silicon-on-insulator (SOI) process and operates at a frequency of 9.64 GHz. It achieves a power conversion efficiency (PCE) of 4% and 46% at power levels of −35 dBm and −10 dBm, respectively." @default.
• W4316660932 created "2023-01-17" @default.
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• W4316660932 date "2023-01-01" @default.
• W4316660932 modified "2023-09-25" @default.
• W4316660932 title "X-Band CMOS Rectifier With 4% Efficiency at −35 dBm for Wireless Power Transmission" @default.
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• W4316660932 doi "https://doi.org/10.1109/access.2023.3237647" @default.
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