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• W4317211340 abstract "Solution-based blended polymer materials are promising for electronic applications in many fields. However, determining a controllable method to achieve electronically active organic films through the practical liquid deposition process is very challenging. In this study, we suggest employing hybrid binary organic mixture inks (an insulating polymer polystyrene (PS)) and an organic semiconductor (6,13-bis(triisopropylsilylethnyl)pentacene (TIPS-pentacene)) to manage and enhance the characteristics of TIPS-pentacene organic layers using a bar-coating method. Binary mixtures with PS molecules can provide various microstructures, crystal orientations, and molecular stacking of the active TIPS-pentacene organic layers under the proper fabrication parameters during bar-coating. Varying the molecular weight of the PS mixture, weight percentage of the TIPS-pentacene, and deposition parameters, such as the bar-coating speed, direction, and contact angles between the crystal orientation of TIPS-pentacene and Au electrodes, is crucial to guarantee high-electronic properties. The electrodes with TIPS-pentacene/PS (MW = 4000) binary films at a 40 wt% TIPS-pentacene ratio demonstrate the outstanding room-temperature field-effect mobility of 1.215 cm2 V-1 s-1, four times higher than that of pure TIPS-pentacene transistors (100 wt%). The performance improvement of the TIPS-pentacene layers is highly attributed to the ideal spherulite structure and thick molecular stacking properties, which can guarantee favorable charge transport paths through organic films. These findings demonstrate a promising strategy for blending organic applications to improve the performance of organic electronic devices using practical fabrication processes." @default.
• W4317211340 created "2023-01-18" @default.
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• W4317211340 date "2023-01-01" @default.
• W4317211340 modified "2023-09-26" @default.
• W4317211340 title "Engineered molecular stacking crystallinity of bar-coated TIPS-pentacene/polystyrene films for organic thin-film transistors" @default.
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• W4317211340 doi "https://doi.org/10.1039/d2ra05924j" @default.
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