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• W4317389905 abstract "We present a strong improvement of the electronic transport properties in the Fe2VAl Heusler alloy obtained in thin-film form by a co-sputtering process. The power factor is improved when deposition occurs at temperatures close to 873 K and when the composition is tuned using a co-sputtering process. High values up to 5.6 mW/K2m are obtained for n-type films deposited at 873 K, which is up to now a record for self-substituted Fe2VAl thermoelectric thin films. The influence of co-sputtering conditions on atomic composition and the substrate effect on electronic transport properties are also presented." @default.
• W4317389905 created "2023-01-19" @default.
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• W4317389905 date "2023-01-18" @default.
• W4317389905 modified "2023-10-16" @default.
• W4317389905 title "Improved Power Factor in Self-Substituted Fe₂VAl Thermoelectric Thin Films Prepared by Co-sputtering" @default.
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• W4317389905 doi "https://doi.org/10.1021/acsaem.2c03405" @default.
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