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• W4317467374 abstract "Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit while perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiO (poly-SiO ) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high-temperature poly-SiO CSPCs and demonstrate novel high-efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiO . Then we optimized the passivation properties of p-type and n-type doped poly-SiO CSPCs. Here, we have optimized the p-type doped poly-SiO CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively." @default.
• W4317467374 created "2023-01-20" @default.
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• W4317467374 date "2023-01-19" @default.
• W4317467374 modified "2023-09-27" @default.
• W4317467374 title "Crystalline silicon solar cells with thin poly-SiO x carrier-selective passivating contacts for perovskite/c-Si tandem applications" @default.
• W4317467374 doi "https://doi.org/10.22541/au.167416697.78728396/v1" @default.
• W4317467374 hasPublicationYear "2023" @default.
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