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• W4317604163 abstract "High-performance ferroelectric devices compatible with the Back-End-of-Line (BEOL) process are necessary for their mass production and application. In this letter, pre-crystallization engineering of increasing the number of cycles of ZrO2 and HfO2 in each period of Hf <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{0.5}}$ </tex-math></inline-formula> Zr0.5O2 (HZO) film growth process was utilized to improve the ferroelectric property of TiN/HZO/TiN capacitors at 400°C annealing process. Grazing incidence X-ray diffraction shows that higher in-situ crystallized tetragonal phase nuclei can be formed in the HZO film with 3 cycles of ZrO2 and 3 cycles of HfO2 (3Z3H) in each period during the ALD step at 280°C, which will enhance the formation of ferroelectric orthorhombic phase after rapid thermal annealing. The developed TiN/3Z3H/TiN capacitor shows high remnant polarization ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$2{P}_{r}$ </tex-math></inline-formula> ) of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$45 ~mu text{C}$ </tex-math></inline-formula> /cm2, and better endurance of more than <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$10^{{10}}$ </tex-math></inline-formula> cycles." @default.
• W4317604163 created "2023-01-21" @default.
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• W4317604163 date "2023-03-01" @default.
• W4317604163 modified "2023-10-15" @default.
• W4317604163 title "Precrystallization Engineering of Hf_0.5Zr_0.5O₂ Film in Back-End-of-Line Compatible Ferroelectric Device for Enhanced Remnant Polarization and Endurance" @default.
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• W4317604163 doi "https://doi.org/10.1109/led.2023.3238120" @default.
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