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- W4317793298 abstract "We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high-K and ferroelectric barriers to date to deliver the highest on-currents at 4 A/mm, and highest speed AlScN transistors with f <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</inf> > 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic $I_{d}-V_{gs}$ loops with subthreshold slopes below the Boltzmann limit. A control A1N barrier HEMT exhibits neither hysteretic, nor sub-Boltzmann behavior. While these results introduce the first epitaxial high-K and ferroelectric barrier technology to RF and mm-wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics." @default.
- W4317793298 created "2023-01-24" @default.
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- W4317793298 date "2022-12-03" @default.
- W4317793298 modified "2023-10-13" @default.
- W4317793298 title "FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors" @default.
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- W4317793298 doi "https://doi.org/10.1109/iedm45625.2022.10019485" @default.
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