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- W4317793563 abstract "A newly developed $underline{m}$ultiple $underline{d}$eep-$underline{o}$xide ${t}$rench (MDOT) technology is demonstrated for Bipolar-CMOS-DMOS-IGBT (BCDI) platform in this paper. MDOT is inserted in the drift region and high-voltage interconnection (HVI) region for area saving through assisting in voltage blocking. The MDOT technology can be applied to various SOI power devices such as lateral IGBT (LIGBT), lateral free-wheeling diode (LFWD) and lateral DMOS (LDMOS). At the voltage of 500V, the drift length $(L_{d})$ of the high-voltage silicon-on-insulator (SOI) LIGBT can be shortened from $47 mu m$ to $21.5 mu m$ and the area of power stage in the single-chip intelligent power IC can be shrunk by 41.1%, allowing significant reduction in size for single-chip intelligent power ICs." @default.
- W4317793563 created "2023-01-24" @default.
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- W4317793563 date "2022-12-03" @default.
- W4317793563 modified "2023-09-26" @default.
- W4317793563 title "41% Reduction In Power Stage Area On Silicon-On-Insulator Bipolar-CMOS-DMOS-IGBT Platform With Newly Developed Multiple Deep-Oxide Trench Technology" @default.
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- W4317793563 doi "https://doi.org/10.1109/iedm45625.2022.10019416" @default.
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