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- W4318450890 abstract "With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 [Formula: see text], we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 [Formula: see text]. Furthermore, due to its mechanically operating mechanisms and radiation-robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit-flip even after 1 Mrad irradiation." @default.
- W4318450890 created "2023-01-30" @default.
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- W4318450890 date "2023-01-28" @default.
- W4318450890 modified "2023-09-25" @default.
- W4318450890 title "Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory" @default.
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- W4318450890 doi "https://doi.org/10.1038/s41467-023-36076-0" @default.
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- W4318450890 hasPublicationYear "2023" @default.
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