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• W4318475089 abstract "This article provides information about the process of obtaining a Mn 4 Si 7 film by magnetron sputtering, its high thermoelectric properties, and the possibility of using the resulting film in instrument-making production. Using the magnetron sputtering method, a thin Mn 4 Si 7 film was obtained, and the composition and structure were studied by a scanning electron microscope. Two-stage cleaning of the silicon surface was used in work. Resistivity was determined by the four-probe method, thermoelectric properties, by the two-probe method. The bandwidth of the Mn 4 Si 7 /SiO 2 film was measured on a high-precision spectrometer according to the law of light reflection. It is shown that the thermoelectric power of the Mn 4 Si 7 film increases during the transition from the amorphous state to the nanocrystalline one, which is associated with the selective scattering of charge carriers at the boundaries of nanoclusters and Mn 4 Si 7 on SiO 2 /Si have high speed and high sensitivity. It is shown that this film can be used in thermal detectors radiation waves in the visible and IR ranges." @default.
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• W4318475089 date "2023-01-01" @default.
• W4318475089 modified "2023-09-23" @default.
• W4318475089 title "Obtaining higher manganese silicide films with high thermoelectric properties" @default.
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• W4318475089 doi "https://doi.org/10.1051/e3sconf/202336505015" @default.
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