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• W4318769500 abstract "Previous works on transistor reliability are mostly devoted to ON-state degradations, such as bias temperature instability and hot carrier degradation, for which physical models have been developed to describe corresponding mechanisms. However, very limited data on OFF-state degradation is available, especially in FinFET technology. In the first part of this article, OFF-sate degradations of 7-nm FinFET technology are reported for the first time. The physics mechanisms in OFF-state degradation are proposed by combining TCAD simulations and comprehensive experimental characterizations. It is found that an enhanced secondary carriers effect is responsible for the OFF-state degradation with contributions from both trapped electrons and holes. Furthermore, typical locations of electron traps and hole traps under the OFF-state degradation are identified. The abnormal leakage degradation is explained in a consistent manner. The analysis here leads to a compact reliability model reported in part II." @default.
• W4318769500 created "2023-02-02" @default.
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• W4318769500 date "2023-03-01" @default.
• W4318769500 modified "2023-10-15" @default.
• W4318769500 title "Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis" @default.
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• W4318769500 doi "https://doi.org/10.1109/ted.2023.3239585" @default.
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