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- W4318969844 abstract "Gallium Nitride (GaN) hetero-structure on Silicon (Si) and Silicon Carbide (SiC) substrates as well as Gallium Arsenide (GaAs) based Hall sensor are developed, evaluated and compared. Each sensor characterization is performed at various magnetic fields up to 2 T over a temperature range of 300 K to 500 K in step size of 25 K. Hall voltages of GaN on Si, GaN on SiC and GaAs sample are measured for magnetic fields ranging from 0.2 T to 2 T at different temperatures. GaAs being a low energy band gap material, its sensitivity drastically drops down from 4300V/AT at low temperatures to around 2500V/AT beyond room temperature. Contrarily, GaN based Hall sensors do not show much variation at high temperatures. The current relative sensitivity obtained experimentally is found to be around 40–50 V/A/T for GaN devices over the temperature range considered; for GaAs device, it is more than 500 V/AT at high temperatures. A very small variation of less than 5% in sensitivity is noted in GaN on Si and GaN on SiC substrates. Also, the absolute temperature co-efficient of GaN devices is 0.03%/K and 0.02%/K for Si and SiC substrates respectively whereas for GaAs devices is 0.23%/K." @default.
- W4318969844 created "2023-02-03" @default.
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- W4318969844 date "2022-12-01" @default.
- W4318969844 modified "2023-10-18" @default.
- W4318969844 title "Comparison of GaN and GaAs based Hall Magnetic Sensor for Power Applications" @default.
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- W4318969844 doi "https://doi.org/10.1109/ises54909.2022.00071" @default.
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