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• W4319067499 abstract "Abstract In this paper, we present a methodology of 3D electro-thermo-mechanical simulation to analyze the strain relaxation and self-heating effects of fin AlGaN/GaN high electron mobility transistors (HEMTs). The free boundaries of narrow fins cause strain relaxation of the AlGaN barrier and a non-uniform strain distribution near the AlGaN/GaN interface. The strain relaxation not only reduces the surface piezoelectric polarization charges (PPCs), but also introduces space PPCs in AlGaN/GaN, leading to a reduction of two-dimensional electron gas density and a positive shift of threshold voltage ( V th ). The simulated V th shift with fin width agrees well with experimental results from literature. In addition, the inter-fin trenches facilitate more efficient lateral heat spreading and suppress the self-heating effect compared with the planar HEMTs with the same effective gate width." @default.
• W4319067499 created "2023-02-04" @default.
• W4319067499 creator A5056585357 @default.
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• W4319067499 date "2023-02-16" @default.
• W4319067499 modified "2023-09-27" @default.
• W4319067499 title "Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs" @default.
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• W4319067499 doi "https://doi.org/10.1088/1361-6641/acb8d4" @default.
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