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• W4319303721 abstract "Abstract Silicon carbide (SiC) has emerged as a candidate material for next-generation power devices to replace traditional silicon power devices. They feature smaller size, faster switching speed, simpler cooling, and greater reliability than Si-MOSFETs. To date, however, the thermal conductance of GeC-based power MOSFETs is unclear. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs." @default.
• W4319303721 created "2023-02-07" @default.
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• W4319303721 date "2023-03-10" @default.
• W4319303721 modified "2023-10-07" @default.
• W4319303721 title "Atomistic simulations of thermal conductivity in novel GeC channel materials from first-principles molecular dynamics calculations" @default.
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• W4319303721 doi "https://doi.org/10.35848/1347-4065/acb94f" @default.
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