Matches in SemOpenAlex for { <https://semopenalex.org/work/W4319462064> ?p ?o ?g. }
- W4319462064 endingPage "1205" @default.
- W4319462064 startingPage "1196" @default.
- W4319462064 abstract "Resistance switching (RS) devices that are based on titanium dioxide (TiO2) nanomaterials have recently attracted substantial research interest because of their simple preparation technology and potential applications in the applications of memory devices. In this paper, the RS characteristics of TiO2-based memristors were regulated by changing the crystal structure of the TiO2 film. Resistive switching memory, consisting of Ag/amorphous TiO2/Ti fabricated by anodic oxidation, exhibited poor cycling stability. Annealing was applied to the anodized sample over the temperature range of 230–680 °C, and the structure of TiO2 was investigated throughout the process. Amorphous TiO2 transformed into the anatase phase as the annealing temperature was increased to 280 °C and the stable cycle number of the device peaked at 51. By annealing at >450 °C, TiO2 was gradually transformed into the rutile phase, and the stable cycle number of the device decreased to 7. X-ray photoelectron spectroscopy confirmed that the concentration of oxygen vacancies in rutile TiO2 decreased with increasing temperature compared with that in anatase TiO2, resulting in the declining performance of the device. This work presents a low-cost annealing process to prepare stable anatase TiO2-based memristors, which will promote the industrialization of the devices for nonvolatile memory applications in the future." @default.
- W4319462064 created "2023-02-09" @default.
- W4319462064 creator A5000970532 @default.
- W4319462064 creator A5006298452 @default.
- W4319462064 creator A5011090841 @default.
- W4319462064 creator A5015741797 @default.
- W4319462064 creator A5034371283 @default.
- W4319462064 creator A5066252650 @default.
- W4319462064 creator A5067665293 @default.
- W4319462064 creator A5070423559 @default.
- W4319462064 date "2023-02-08" @default.
- W4319462064 modified "2023-10-12" @default.
- W4319462064 title "Optimization of the Cycle Numbers of TiO<sub>2</sub> Resistive Random-Access Memory Devices by Annealing" @default.
- W4319462064 cites W1977042446 @default.
- W4319462064 cites W1987312733 @default.
- W4319462064 cites W1987870051 @default.
- W4319462064 cites W1990634844 @default.
- W4319462064 cites W2003605077 @default.
- W4319462064 cites W2004823737 @default.
- W4319462064 cites W2023922745 @default.
- W4319462064 cites W2026000014 @default.
- W4319462064 cites W2031688087 @default.
- W4319462064 cites W2062058934 @default.
- W4319462064 cites W2068284995 @default.
- W4319462064 cites W2108343465 @default.
- W4319462064 cites W2142547791 @default.
- W4319462064 cites W2142847629 @default.
- W4319462064 cites W2177185482 @default.
- W4319462064 cites W2296420188 @default.
- W4319462064 cites W2314921565 @default.
- W4319462064 cites W2325180785 @default.
- W4319462064 cites W2486645880 @default.
- W4319462064 cites W2516030548 @default.
- W4319462064 cites W2552574160 @default.
- W4319462064 cites W2571711614 @default.
- W4319462064 cites W2590562834 @default.
- W4319462064 cites W2595358924 @default.
- W4319462064 cites W2762482777 @default.
- W4319462064 cites W2767657793 @default.
- W4319462064 cites W2771196133 @default.
- W4319462064 cites W2833268764 @default.
- W4319462064 cites W2838974926 @default.
- W4319462064 cites W2898682353 @default.
- W4319462064 cites W2915085326 @default.
- W4319462064 cites W2944651134 @default.
- W4319462064 cites W2946525156 @default.
- W4319462064 cites W2979318957 @default.
- W4319462064 cites W2980375307 @default.
- W4319462064 cites W3012346293 @default.
- W4319462064 cites W3016819005 @default.
- W4319462064 cites W3028924546 @default.
- W4319462064 cites W3030536412 @default.
- W4319462064 cites W3035288648 @default.
- W4319462064 cites W3049309316 @default.
- W4319462064 cites W3088665108 @default.
- W4319462064 cites W3115793105 @default.
- W4319462064 cites W3137986069 @default.
- W4319462064 cites W3187725493 @default.
- W4319462064 cites W3196539000 @default.
- W4319462064 cites W3217291384 @default.
- W4319462064 cites W4200533923 @default.
- W4319462064 cites W4205843713 @default.
- W4319462064 cites W4214882406 @default.
- W4319462064 cites W4220738240 @default.
- W4319462064 cites W4221047264 @default.
- W4319462064 cites W4226169715 @default.
- W4319462064 cites W4293077160 @default.
- W4319462064 doi "https://doi.org/10.1021/acsaelm.2c01646" @default.
- W4319462064 hasPublicationYear "2023" @default.
- W4319462064 type Work @default.
- W4319462064 citedByCount "0" @default.
- W4319462064 crossrefType "journal-article" @default.
- W4319462064 hasAuthorship W4319462064A5000970532 @default.
- W4319462064 hasAuthorship W4319462064A5006298452 @default.
- W4319462064 hasAuthorship W4319462064A5011090841 @default.
- W4319462064 hasAuthorship W4319462064A5015741797 @default.
- W4319462064 hasAuthorship W4319462064A5034371283 @default.
- W4319462064 hasAuthorship W4319462064A5066252650 @default.
- W4319462064 hasAuthorship W4319462064A5067665293 @default.
- W4319462064 hasAuthorship W4319462064A5070423559 @default.
- W4319462064 hasConcept C127413603 @default.
- W4319462064 hasConcept C161790260 @default.
- W4319462064 hasConcept C171250308 @default.
- W4319462064 hasConcept C175708663 @default.
- W4319462064 hasConcept C185592680 @default.
- W4319462064 hasConcept C191897082 @default.
- W4319462064 hasConcept C192562407 @default.
- W4319462064 hasConcept C2777402863 @default.
- W4319462064 hasConcept C2777593239 @default.
- W4319462064 hasConcept C2777855556 @default.
- W4319462064 hasConcept C2777889555 @default.
- W4319462064 hasConcept C42360764 @default.
- W4319462064 hasConcept C49040817 @default.
- W4319462064 hasConcept C506065880 @default.
- W4319462064 hasConcept C55493867 @default.
- W4319462064 hasConcept C56052488 @default.
- W4319462064 hasConcept C65165184 @default.
- W4319462064 hasConcept C8010536 @default.