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• W4319778049 abstract "Doing less gate all around (GAA) charge plasma (CP) based field effect transistor (FET) has exhibited better performance in terms of short channel effects (SCE) compared to junction-less (JL) FET. GaN has displayed promising characteristics towards bringing down SCEs in charge plasma-based devices for having higher electron mobility and wide band gap properties. In this work, four different wide band gap materials such as GaAs, Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.1</inf> Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.9</inf> As, InP, and GaN were utilized in the intrinsic channel of charge plasma-based doping less FET to compare the transfer characteristics and transconductance (g <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</inf> ). SCEs such as drain-induced barrier lowering (DIBL) and subthreshold slope (SS) were compared and the figure of merit (FOM), Q (g <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</inf> /SS) was also calculated. Subsequently, high–k dielectric material’s effect on I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</inf> , I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</inf> , and I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</inf> /I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</inf> at gate oxide were investigated for low power applications. Our findings revealed that CP–GaAs showed a better tradeoff between DIBL and SS in comparison to CP–GaN. Also, CP–InP produced a higher threshold device that can be used in the field of memory design. In contrast with Q factor, CP–GaN produced a higher value but CP–GaAs showed a better DIBL–SS value. Hence, both CP–GaN and CP–GaAs can be considered for high-switching applications. Also, CP–GaN produced higher transconductance than other channel materials which will offer the new scheme to enhance device performance." @default.
• W4319778049 created "2023-02-11" @default.
• W4319778049 creator A5002917389 @default.
• W4319778049 creator A5034801605 @default.
• W4319778049 creator A5036813894 @default.
• W4319778049 creator A5054739291 @default.
• W4319778049 date "2022-11-26" @default.
• W4319778049 modified "2023-09-26" @default.
• W4319778049 title "Comparative Analysis of Short Channel Effects in Dopingless Charge Plasma Based Nanowire FET" @default.
• W4319778049 cites W2132841962 @default.
• W4319778049 cites W2156057417 @default.
• W4319778049 cites W2168174226 @default.
• W4319778049 cites W2343235644 @default.
• W4319778049 cites W2768574320 @default.
• W4319778049 cites W2781321130 @default.
• W4319778049 cites W2794399970 @default.
• W4319778049 cites W2901828451 @default.
• W4319778049 cites W2918940007 @default.
• W4319778049 cites W2921521085 @default.
• W4319778049 cites W3086429946 @default.
• W4319778049 cites W3121023431 @default.
• W4319778049 cites W3127314946 @default.
• W4319778049 cites W3161591336 @default.
• W4319778049 cites W3194345311 @default.
• W4319778049 cites W4206436202 @default.
• W4319778049 cites W4214659795 @default.
• W4319778049 doi "https://doi.org/10.1109/edkcon56221.2022.10032885" @default.
• W4319778049 hasPublicationYear "2022" @default.
• W4319778049 type Work @default.
• W4319778049 citedByCount "2" @default.
• W4319778049 countsByYear W43197780492022 @default.
• W4319778049 countsByYear W43197780492023 @default.
• W4319778049 crossrefType "proceedings-article" @default.
• W4319778049 hasAuthorship W4319778049A5002917389 @default.
• W4319778049 hasAuthorship W4319778049A5034801605 @default.
• W4319778049 hasAuthorship W4319778049A5036813894 @default.
• W4319778049 hasAuthorship W4319778049A5054739291 @default.
• W4319778049 hasConcept C119599485 @default.
• W4319778049 hasConcept C121332964 @default.
• W4319778049 hasConcept C127413603 @default.
• W4319778049 hasConcept C130277099 @default.
• W4319778049 hasConcept C165801399 @default.
• W4319778049 hasConcept C172385210 @default.
• W4319778049 hasConcept C184720557 @default.
• W4319778049 hasConcept C192562407 @default.
• W4319778049 hasConcept C2779283907 @default.
• W4319778049 hasConcept C49040817 @default.
• W4319778049 hasConcept C62520636 @default.
• W4319778049 hasConceptScore W4319778049C119599485 @default.
• W4319778049 hasConceptScore W4319778049C121332964 @default.
• W4319778049 hasConceptScore W4319778049C127413603 @default.
• W4319778049 hasConceptScore W4319778049C130277099 @default.
• W4319778049 hasConceptScore W4319778049C165801399 @default.
• W4319778049 hasConceptScore W4319778049C172385210 @default.
• W4319778049 hasConceptScore W4319778049C184720557 @default.
• W4319778049 hasConceptScore W4319778049C192562407 @default.
• W4319778049 hasConceptScore W4319778049C2779283907 @default.
• W4319778049 hasConceptScore W4319778049C49040817 @default.
• W4319778049 hasConceptScore W4319778049C62520636 @default.
• W4319778049 hasLocation W43197780491 @default.
• W4319778049 hasOpenAccess W4319778049 @default.
• W4319778049 hasPrimaryLocation W43197780491 @default.
• W4319778049 hasRelatedWork W1977736148 @default.
• W4319778049 hasRelatedWork W1982232186 @default.
• W4319778049 hasRelatedWork W1992577152 @default.
• W4319778049 hasRelatedWork W2007637148 @default.
• W4319778049 hasRelatedWork W2060850355 @default.
• W4319778049 hasRelatedWork W2086652381 @default.
• W4319778049 hasRelatedWork W2136230105 @default.
• W4319778049 hasRelatedWork W2899084033 @default.
• W4319778049 hasRelatedWork W3039521474 @default.
• W4319778049 hasRelatedWork W830396748 @default.
• W4319778049 isParatext "false" @default.
• W4319778049 isRetracted "false" @default.
• W4319778049 workType "article" @default.