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• W4319865491 abstract "An ultra-dense one-transistor (1T) ternary-content addressable memory (TCAM) array is reported that is based on high-performance, non-volatile, and ambipolar ferroelectric (Fe) silicon-on-insulator (SOI) fin field-effect transistors (FinFETs). Because of the multistates in the Fe layer and the ambipolar characteristics, TCAM functions were realized on a single device. From the advanced CMOS process and the metallic source and drain (MSD) engineering, a maximum driving ON-current of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$sim 0.1~mu text{A}/mu text{m}$ </tex-math></inline-formula> and a <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$sim 1000$ </tex-math></inline-formula> ON/OFF ratio at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {GS}}= -0.25$ </tex-math></inline-formula> V were realized for the 1T TCAM cell. This indicated large-array integration feasibility. In addition, <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${2} times {2}$ </tex-math></inline-formula> and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${1} times {8}$ </tex-math></inline-formula> TCAM arrays are demonstrated. The quasi-linear dependence of a matching line (ML) voltage with the number of mismatched bits indicated a potential for Hamming-distance computing in area- and energy-efficient artificial intelligence (AI) processors." @default.
• W4319865491 created "2023-02-11" @default.
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• W4319865491 date "2023-03-01" @default.
• W4319865491 modified "2023-10-14" @default.
• W4319865491 title "An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors" @default.
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• W4319865491 doi "https://doi.org/10.1109/ted.2023.3239330" @default.
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