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- W4320148441 abstract "As one of the approaches to improve p-HEMT, we studied the effect of misorientation of GaAs substrates on the surface morphology, structure, and electrical properties of pseudomorphic heterostructures, as well as the parameters of transistors based on them. In a single technological cycle, heterostructures were formed on vicinal substrates with (100) orientation and misoriented by 2 o to (110) by the method of MOCVD (MOCVD) in a single technological cycle. It has been established that on misoriented substrates, the growth of structurally consistent and stressed epitaxial layers occurs according to a layered-step mechanism with the formation of macrosteps. On vicinal substrates, the formation of monatomic growth steps was observed. The comparative characteristics of p-HEMT obtained using two types of substrates are considered. Keywords: GaAs/InGaAs/GaAlAs heterostructures, MOCVD epitaxy, p-HEMT, substrate misorientation, comparative characteristics of structures and p-HEMT based on them." @default.
- W4320148441 created "2023-02-13" @default.
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- W4320148441 date "2022-01-01" @default.
- W4320148441 modified "2023-09-27" @default.
- W4320148441 title "Effect of substrate misorientation on the properties of p-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy" @default.
- W4320148441 doi "https://doi.org/10.21883/tp.2022.10.54363.143-22" @default.
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