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• W4320730079 startingPage "115686" @default.
• W4320730079 abstract "The presence of Schottky barriers at the metal-semiconductor interfaces has always been troubling people all over the world. Therefore, achieving Ohmic contacts for high-performance and energy-efficient Schottky devices becomes imminent. Bulk metals as electrodes usually produce a severe Fermi level pinning (FLP) effect due to the presence of dangling bonds on their surfaces. Here, our recent work shows that the FLP effect can be effectively suppressed in MoSi2N4 (MSN) and WSi2N4 (WSN) contact with seven two-dimensional (2D) metals. The measured n-type and p-type pinning factors S are 0.42, −0.63 for MSN, 0.43, −0.51 for WSN, respectively, indicating a weak FLP effect. We also confirm that Ohmic contacts can be achieved just by Van der Waals stacking. Ohmic contacts can be obtained for NbS2, TaS2, TaSe2, and VS2 in contact with MSN and for NbS2, NbSe2, TaS2, and VS2 in contact with WSN. Our work unveils that MSN/2D metals and WSN/2D metals contacts show great potential in high-performance Schottky electronic devices." @default.
• W4320730079 created "2023-02-15" @default.
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• W4320730079 date "2023-05-01" @default.
• W4320730079 modified "2023-10-02" @default.
• W4320730079 title "Van der Waals stacking-induced efficient Ohmic contacts and the weak Fermi level pinning effect in MoSi2N4 and WSi2N4 contact with two-dimensional metals" @default.
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• W4320730079 doi "https://doi.org/10.1016/j.physe.2023.115686" @default.
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