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- W4320805594 abstract "The technique of high-energy ion irradiation is an interesting alternative to low-temperature epitaxy for reducing the absorption relaxation time in semiconductor materials. The possibility of creating defects of particular structures by heavy-ion irradiation was suggested as early as in 1980, but experimental works [1] only gave indirect indications of this possibility. To our knowledge, there are no comparative measurements of irradiated materials directly showing the particular properties of heavy-ion irradiation for applications to fast and efficient saturable absorbers." @default.
- W4320805594 created "2023-02-15" @default.
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- W4320805594 date "1998-01-01" @default.
- W4320805594 modified "2023-10-18" @default.
- W4320805594 title "High-Energy Heavy-Ion Irradiation into Bulk Gaas for Sub-Picosecond Wide-Band Efficient Saturable Absorbers" @default.
- W4320805594 doi "https://doi.org/10.1364/cleo_europe.1998.ctui75" @default.
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