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- W4321143597 abstract "High-power arrays of GaAs/AIGaAs and InGaAs/AIGaAs diode lasers are under intensive development as sources for pumping rare earth ions in solid-state lasers, as well as for other applications. Graded-index separate-confinement heterostructure single quantum-well (GRIN-SCH SQW) lasers are attractive for this application because of their low-threshold current density and high differential quantum efficiency. For efficient pumping, the diode-laser emission wavelength must coincide with the absorption band of the rare earth ion. This requirement necessitates close control of the properties of wafers used for diode fabrication. We have used a specially designed vertical rotating-disk reactor for growth by organometallic vapor-phase epitaxy (OMVPE) of GaAs, InGaAs, and AlGaAs layers with exceptional thickness and composition uniformity over5-cm-diameter GaAs wafers." @default.
- W4321143597 created "2023-02-18" @default.
- W4321143597 creator A5052202473 @default.
- W4321143597 date "1990-01-01" @default.
- W4321143597 modified "2023-09-29" @default.
- W4321143597 title "OMVPE growth of low-threshold, high-efficiency GaAs/AIGaAs and strained layer InGaAs/AIGaAs diode lasers" @default.
- W4321143597 doi "https://doi.org/10.1364/ipr.1990.tug1" @default.
- W4321143597 hasPublicationYear "1990" @default.
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