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- W4321519005 abstract "Molecular beam epitaxy (MBE) has made many important contributions to research and development of III-V compound semiconductor devices. For example, MBE has become the predominant technique of epitaxial material growth for digital heterostructure circuits employing heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). This has occurred despite the relatively high cost of MBE apparatus, and the reputation of MBE as an esoteric technology. Since high speed heterostructure devices appear to be moving rapidly toward the production line, it is important to consider the status of MBE in device research and development, and the future of MBE in the transition to production." @default.
- W4321519005 created "2023-02-24" @default.
- W4321519005 creator A5073836666 @default.
- W4321519005 date "1985-01-01" @default.
- W4321519005 modified "2023-09-30" @default.
- W4321519005 title "Molecular Beam Epitaxy Materials for High Speed Digital Heterostructure Devices" @default.
- W4321519005 doi "https://doi.org/10.1364/peo.1985.thc6" @default.
- W4321519005 hasPublicationYear "1985" @default.
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