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• W4321608185 abstract "Two type CMOS-compatible complementary phototransistors (CPTs) with NMOS or PMOS transistor are proposed in this work for in-sensor vector-matrix multiplication (VMM). The CPT is fabricated by the 22nm FDSOI process technology and composed of a MOSFET with a p-doped well under the buried oxide (BOX). The well serves for photoelectron generation and affects the on-state current of the MOSFET by the photoelectrons. The bidirectional and tunable photoresponsivity characteristics as well as the optical-electrical signed multiplication operation (average error < 2.5%) are experimentally demonstrated in the pair of CPTs. The in-sensor VMM is verified by typical artificial neural networks using the CPT array as the image-input layer. Simulated results show slight inference accuracy losses (< 1%) in LeNet3 for MNIST and VGG11/VGG16 for CIFAR-10 recognition." @default.
• W4321608185 created "2023-02-24" @default.
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• W4321608185 date "2023-04-01" @default.
• W4321608185 modified "2023-10-18" @default.
• W4321608185 title "Fully-Depleted Silicon-on-Insulator (FDSOI) Based Complementary Phototransistors for In-Sensor Vector-Matrix Multiplication" @default.
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• W4321608185 doi "https://doi.org/10.1109/led.2023.3248076" @default.
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