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• W4322489043 abstract "In this paper, we demonstrate the AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate using an AlGaN back-barrier (BB) and super-lattice (SL) buffer to achieve high breakdown and low current collapse (CC) properties for Radio-frequency (RF) applications. The HEMTs also demonstrated low initial vertical leakage current, high thermal stability, and smaller drain-lag with reduced leakage currents as compared to the devices using step-graded (SG) AlGaN buffer. Also, the device showed improved RF performances with higher f T and f max as compared to the devices with SG buffer." @default.
• W4322489043 created "2023-02-28" @default.
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• W4322489043 date "2023-03-01" @default.
• W4322489043 modified "2023-10-16" @default.
• W4322489043 title "Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering" @default.
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• W4322489043 doi "https://doi.org/10.1149/2162-8777/acbf72" @default.
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