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- W4322731736 abstract "This study proposes a periodic cavities structure on the absorber of a CMOS-MEMS thermoelectric (TE) infrared (IR) sensor implemented through TSMC 0.18 μm 1P6M standard CMOS platform for absorption enhancement. Design proposed in this study features: (1) utilizing periodic cavities on the absorber to enhance IR absorption, (2) increasing cavity density to further improve IR absorption, (3) leveraging the advantages of CMOS platform to realize this sub-wavelength optical structure. The TE IR sensor in this study is aimed to be applied in human body temperature detections with a spectral sensing range from 8-14 μm wavelength. Absorption spectrum measurements show the enhancement within target band. Responsivity measurements also reveal cavity structures on the absorber can enhance the performance by 10.8%." @default.
- W4322731736 created "2023-03-03" @default.
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- W4322731736 date "2023-01-15" @default.
- W4322731736 modified "2023-09-26" @default.
- W4322731736 title "Periodic Cavities on the IR-Absorber for Responsivity Enhancement of CMOS-MEMS Thermoelectric IR Sensor" @default.
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- W4322731736 doi "https://doi.org/10.1109/mems49605.2023.10052530" @default.
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