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• W4322762714 endingPage "035005" @default.
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• W4322762714 abstract "In this work, we report the results of temperature dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80–330 K. The analysis results of according to thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations ( σ 0 ) of 0.073 V and 0.18 V and mean barrier height ( <?CDATA ${bar{{rm{Phi }}}}_{b0}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:msub> <mml:mrow> <mml:mover accent=true> <mml:mi mathvariant=normal>Φ</mml:mi> <mml:mo>¯</mml:mo> </mml:mover> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> <mml:mn>0</mml:mn> </mml:mrow> </mml:msub> </mml:math> ) values of 0.595 and 1.427 eV in the change of 80–140 K and 160–330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant ( A *) of 321.805 and 110.935 A K −2 cm −2 , and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A * value of 110.935 A K −2 cm −2 is close to the theoretical value of 112 A K −2 cm −2 for n-Si. These results proved that there is barrier inhomogeneity." @default.
• W4322762714 created "2023-03-03" @default.
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• W4322762714 date "2023-03-01" @default.
• W4322762714 modified "2023-09-25" @default.
• W4322762714 title "The Double Gaussian distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes" @default.
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• W4322762714 doi "https://doi.org/10.1149/2162-8777/acc094" @default.
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