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- W4323311909 abstract "A general classification of thermally activated shrinkage mechanism of dislocation loops of vacancy and interstitial type is given. Characteristic difference between the shrinkage by emission and by absorption of point defects is demonstrated experimentally in a representative fcc metal. The analysis of the observed shrinkage behaviour in semiconducter germanium leads to the conclusion of the vacancies to be the defects responsible as the carrier in self-diffusion. Self-diffusion energies in these materials are estimated from the temperature dependence of the shrinkage speed of interstitial type dislocation loops. A discussion is given on the diffusion carrier in silicon." @default.
- W4323311909 created "2023-03-07" @default.
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- W4323311909 date "2023-03-06" @default.
- W4323311909 modified "2023-09-24" @default.
- W4323311909 title "Shrinkage of Dislocation Loops by Emission and Absorption of Point Defects and Identification of Self-Diffusion Carriers in Metals and Semiconductors" @default.
- W4323311909 doi "https://doi.org/10.1201/9780429070914-98" @default.
- W4323311909 hasPublicationYear "2023" @default.
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