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- W4323319468 abstract "A quantitative TEM analysis of the dislocation structure at the lower yield point of silicon is reported. A fair agreement is obtained at low temperature (T ≲ 900 K), low strain rate https://www.w3.org/1998/Math/MathML> ( γ ˙ ~ 2.10 − 5 s − 1 ) https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9780429070914/564d64e2-e041-4c69-948a-24fd34915041/content/eq1265.tif xmlns:xlink=https://www.w3.org/1999/xlink/> between the measured strain rate and the one calculated with Orowan formula using direct estimates of the mobile dislocation density and effective stress." @default.
- W4323319468 created "2023-03-07" @default.
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- W4323319468 date "2023-03-06" @default.
- W4323319468 modified "2023-09-27" @default.
- W4323319468 title "An Estimation of the Effective Stress and Mobile Dislocation Density at the Yield Point of Silicon" @default.
- W4323319468 doi "https://doi.org/10.1201/9780429070914-101" @default.
- W4323319468 hasPublicationYear "2023" @default.
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