Matches in SemOpenAlex for { <https://semopenalex.org/work/W4323767259> ?p ?o ?g. }
- W4323767259 endingPage "2128" @default.
- W4323767259 startingPage "2121" @default.
- W4323767259 abstract "This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate to push its performance limits for circuit-level applications. The highly scaled self-aligned (SA) p-channel FinFET (a fin width of 20 nm) achieved an <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}_{D,text {max}}$ </tex-math></inline-formula> of −300 mA/mm and an <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{ mathrm{ ON}}$ </tex-math></inline-formula> of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$27 Omega cdot $ </tex-math></inline-formula> mm, a record for metal organic chemical vapor deposition (MOCVD)-grown III-nitride p-FETs. A systematic study on impact of fin width scaling and recess depth in these transistors was conducted. A new SA scaled n-channel p-GaN-gate FET (n-FET) process, compatible with the p-FinFET, demonstrated enhancement-mode (E-mode) n-FETs ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${L}_{G} = {200}$ </tex-math></inline-formula> nm, <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}_{D,text {max}} = {525}$ </tex-math></inline-formula> mA/mm, and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{ mathrm{ ON}}={2}.{9},,Omega cdot $ </tex-math></inline-formula> mm) on the same epitaxial platform. The p-FETs and n-FETs feature competitive performance in their respective categories and, when taken together, offer a leading solution for GaN CT on a silicon substrate." @default.
- W4323767259 created "2023-03-11" @default.
- W4323767259 creator A5003564654 @default.
- W4323767259 creator A5017235448 @default.
- W4323767259 creator A5020363271 @default.
- W4323767259 creator A5024027903 @default.
- W4323767259 creator A5024621695 @default.
- W4323767259 creator A5072896238 @default.
- W4323767259 creator A5073033826 @default.
- W4323767259 creator A5080719285 @default.
- W4323767259 date "2023-04-01" @default.
- W4323767259 modified "2023-10-14" @default.
- W4323767259 title "Highly Scaled GaN Complementary Technology on a Silicon Substrate" @default.
- W4323767259 cites W1911063597 @default.
- W4323767259 cites W2081737281 @default.
- W4323767259 cites W2118318521 @default.
- W4323767259 cites W2290083393 @default.
- W4323767259 cites W2775369742 @default.
- W4323767259 cites W2794102348 @default.
- W4323767259 cites W2887477863 @default.
- W4323767259 cites W2946069199 @default.
- W4323767259 cites W3006071289 @default.
- W4323767259 cites W3015731122 @default.
- W4323767259 cites W3085685039 @default.
- W4323767259 cites W3121745077 @default.
- W4323767259 cites W3136484537 @default.
- W4323767259 cites W3137664828 @default.
- W4323767259 cites W3184733425 @default.
- W4323767259 cites W3199982258 @default.
- W4323767259 cites W3212324530 @default.
- W4323767259 cites W3214819373 @default.
- W4323767259 cites W3215281310 @default.
- W4323767259 cites W4205200257 @default.
- W4323767259 cites W4206736442 @default.
- W4323767259 cites W4210830536 @default.
- W4323767259 cites W4213305608 @default.
- W4323767259 cites W4214925595 @default.
- W4323767259 cites W4223546777 @default.
- W4323767259 cites W4225667759 @default.
- W4323767259 cites W4283214484 @default.
- W4323767259 cites W4285240736 @default.
- W4323767259 cites W4285295980 @default.
- W4323767259 cites W4286377424 @default.
- W4323767259 cites W4294643394 @default.
- W4323767259 cites W4295700779 @default.
- W4323767259 cites W4297748723 @default.
- W4323767259 cites W4309219083 @default.
- W4323767259 cites W4309900064 @default.
- W4323767259 cites W4312051249 @default.
- W4323767259 cites W4313387415 @default.
- W4323767259 cites W4313434162 @default.
- W4323767259 cites W4313577289 @default.
- W4323767259 cites W4317794260 @default.
- W4323767259 cites W4319341992 @default.
- W4323767259 doi "https://doi.org/10.1109/ted.2023.3247684" @default.
- W4323767259 hasPublicationYear "2023" @default.
- W4323767259 type Work @default.
- W4323767259 citedByCount "3" @default.
- W4323767259 countsByYear W43237672592023 @default.
- W4323767259 crossrefType "journal-article" @default.
- W4323767259 hasAuthorship W4323767259A5003564654 @default.
- W4323767259 hasAuthorship W4323767259A5017235448 @default.
- W4323767259 hasAuthorship W4323767259A5020363271 @default.
- W4323767259 hasAuthorship W4323767259A5024027903 @default.
- W4323767259 hasAuthorship W4323767259A5024621695 @default.
- W4323767259 hasAuthorship W4323767259A5072896238 @default.
- W4323767259 hasAuthorship W4323767259A5073033826 @default.
- W4323767259 hasAuthorship W4323767259A5080719285 @default.
- W4323767259 hasBestOaLocation W43237672591 @default.
- W4323767259 hasConcept C111368507 @default.
- W4323767259 hasConcept C121332964 @default.
- W4323767259 hasConcept C127313418 @default.
- W4323767259 hasConcept C192562407 @default.
- W4323767259 hasConcept C2524010 @default.
- W4323767259 hasConcept C2777289219 @default.
- W4323767259 hasConcept C33923547 @default.
- W4323767259 hasConcept C45357846 @default.
- W4323767259 hasConcept C94375191 @default.
- W4323767259 hasConcept C99844830 @default.
- W4323767259 hasConceptScore W4323767259C111368507 @default.
- W4323767259 hasConceptScore W4323767259C121332964 @default.
- W4323767259 hasConceptScore W4323767259C127313418 @default.
- W4323767259 hasConceptScore W4323767259C192562407 @default.
- W4323767259 hasConceptScore W4323767259C2524010 @default.
- W4323767259 hasConceptScore W4323767259C2777289219 @default.
- W4323767259 hasConceptScore W4323767259C33923547 @default.
- W4323767259 hasConceptScore W4323767259C45357846 @default.
- W4323767259 hasConceptScore W4323767259C94375191 @default.
- W4323767259 hasConceptScore W4323767259C99844830 @default.
- W4323767259 hasFunder F4320306101 @default.
- W4323767259 hasFunder F4320307102 @default.
- W4323767259 hasFunder F4320308258 @default.
- W4323767259 hasFunder F4320325821 @default.
- W4323767259 hasFunder F4320332195 @default.
- W4323767259 hasFunder F4320332276 @default.
- W4323767259 hasIssue "4" @default.
- W4323767259 hasLocation W43237672591 @default.
- W4323767259 hasLocation W43237672592 @default.