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• W4323810318 abstract "Beyond traditional heteroepitaxy, 2D-materials-assisted epitaxy opens opportunities to revolutionize future material integration methods. However, basic principles in 2D-material-assisted nitrides' epitaxy remain unclear, which impedes understanding the essence, thus hindering its progress. Here, the crystallographic information of nitrides/2D material interface is theoretically established, which is further confirmed experimentally. It is found that the atomic interaction at the nitrides/2D material interface is related to the nature of underlying substrates. For single-crystalline substrates, the heterointerface behaves like a covalent one and the epilayer inherits the substrate's lattice. Meanwhile, for amorphous substrates, the heterointerface tends to be a van der Waals one and strongly relies on the properties of 2D materials. Therefore, modulated by graphene, the nitrides' epilayer is polycrystalline. In contrast, single-crystalline GaN films are successfully achieved on WS2 . These results provide a suitable growth-front construction strategy for high-quality 2D-material-assisted nitrides' epitaxy. It also opens a pathway toward various semiconductors heterointegration." @default.
• W4323810318 created "2023-03-11" @default.
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• W4323810318 date "2023-03-20" @default.
• W4323810318 modified "2023-10-10" @default.
• W4323810318 title "Principles for 2D‐Material‐Assisted Nitrides Epitaxial Growth" @default.
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• W4323810318 doi "https://doi.org/10.1002/adma.202211075" @default.
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