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- W4324133075 abstract "In this talk, I will discuss results from atomistic calculations that uncover the mechanisms that limit the efficiency of UV light emitters and predict excitonic heterostructures with improved efficiency. In particular, I will show how Fermi-level control during the growth of p-type AlGaN contacts can promote acceptor incorporation and decrease charge compensation, increasing the electrical conductivity. I will also discuss the detrimental role of statistically random alloy disorder in AlGaN to the efficiency of carrier transport and recombination. Alternatively, we propose atomically thin GaN/AlN superlattices and quantum wells as a mechanism to improve the carrier mobility and to form stable excitons at room temperature that increase the radiative recombination rate. I will also discuss how the integration of hexagonal BN with nitride heterostructures is a promising material to realize efficient excitonic UV light emitters despite its indirect band gap." @default.
- W4324133075 created "2023-03-15" @default.
- W4324133075 creator A5022593514 @default.
- W4324133075 date "2023-03-14" @default.
- W4324133075 modified "2023-09-28" @default.
- W4324133075 title "Theoretical characterization and computational discovery of AlGaN and BN UV light emitters with predictive atomistic calculations (Conference Presentation)" @default.
- W4324133075 doi "https://doi.org/10.1117/12.2650404" @default.
- W4324133075 hasPublicationYear "2023" @default.
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